symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 19.6 25 48 60 r jc 1 1.5 i dsm 17 a t a =70c 13 maximum junction-to-ambient a steady-state c/w p dsm 2.1 t a =70c 1.3 -55 to 175 pulsed drain current gate-source voltage power dissipation a t a =25c power dissipation b t c =25c continuous drain current g t a =25c maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w p d avalanche current c t c =100c junction and storage temperature range repetitive avalanche energy l=0.1mh c continuous drain current b,g maximum units parameter t c =25c g t c =100c b 30 absolute maximum ratings t a =25c unless otherwise noted v drain-source voltage v 20 30 a 85 73 a i d 200 mj w 50 c 100 w 45 aol1444 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 4.3m (v gs = 10v) r ds(on) < 6.3m (v gs = 4.5v) general description the aol1444 uses advanced trench technology to provide excellent r ds(on) , shoot-through immunity and body diode characteristics. this device is ideally suited for use as a low side switch in cpu core power conversion. standard product aol1444 is pb-free (meets rohs & sony 259 specifications). AOL1444L is a green product ordering option. aol1444 and AOL1444L are electrically identical. g d s ultra so-8 tm top view bottom tab connected to drai n fits soic8 footprint ! s g d alpha & omega semiconductor, ltd.
aol1444 symbol min typ max units bv dss 30 v 0.005 1 t j =55c 5 i gss 100 na v gs(t 1.45 1.8 3 v i d(on) 200 a 3.2 4.3 t j =125c 4.3 5.2 4.9 6.3 m g fs 85 s v sd 0.7 1 v i s 85 a c iss 6070 7000 pf c oss 638 pf c rss 375 pf r g 0.45 0.6 q g (10v) 96.4 115 nc q g (4.5v) 46.4 55 nc q gs 13.6 nc q gd 15.6 nc t d(on) 15.7 21 ns t r 14.2 21 ns t d(off) 55.5 75 ns t f 14 21 ns t rr 31 38 ns q rr 24 29 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =15v, i d =20a a: the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation pd is based on tj(max)=175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature tj(max)=175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of tj(max)=175c. g. surface mounted on a 1 in 2 fr-4 board with 2oz. copper. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the so a curve provides a single pulse rating. rev0. dec 2005 alpha & omega semiconductor, ltd.
aol1444 t c =100c t a =25c -55 to 175 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 10v 3.5v 4.5v 0 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20406080100 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 2 4 6 8 10 12 14 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd.
aol1444 typical electrical and thermal characteristic s t c =100c t a =25c -55 to 175 0 2 4 6 8 10 0 20406080100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to - case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 10 s v ds =15v i d =20a single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse t j(max) =175c t c =25c alpha & omega semiconductor, ltd.
aol1444 typical electrical and thermal characteristics 0 20 40 60 80 100 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to - ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse single pulse alpha & omega semiconductor, ltd.
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